Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth-Reference-Cited by-同舟云学术

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Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

Published:2019-05-28 Issue:SC Volume:58 Page:SC1055
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Qiang,Fujimoto Naoki,Nitta Shugo,Honda Yoshio,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab124e/pdf

Reference42 articles.

1. GaN, AlN, and InN: A review

2. First-principles calculations of effective-mass parameters of AlN and GaN

3. Electrical properties of n-type vapor-grown gallium nitride

4. Hole Compensation Mechanism of P-Type GaN Films

5. Thermal conductivity of GaN, 25–360 K

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of SiC deposition uniformity in CVD reactor by showerhead with baffle;Journal of Crystal Growth;2023-08

2. GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment;Applied Physics Letters;2022-08-29

3. Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl₃ gas supply system;Japanese Journal of Applied Physics;2022-07-01

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