Author:
Gao Yuqiang,Hu Xiaobo,Chen Xiufang,Xu Xiangang,Peng Yan,Song Sheng,Jiang Minhua
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. J. Palmour, R. Singh, R.C. Glass, O. Kordina, C.H. Carter, Silicon carbide for power devices, in: Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD ’97, 26–29 May 1997, pp. 25–32.
2. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
3. Wide Bandgap Semiconductors—Fundamental Properties and Modern Photonic and Electronic Devices;Takahashi,2007
4. Investigation of growth processes of ingots of silicon carbide single crystals
5. General principles of growing large-size single crystals of various silicon carbide polytypes
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