Spatial variation of lattice plane bending of 4H-SiC substrates
Author:
Affiliation:
1. State Key Lab of Crystal Materials
2. Shandong University
3. Jinan
4. China
5. Microsystem Technology Laboratory
6. Collaborative Innovation Center for Global Energy Interconnection (Shandong)
Abstract
Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE00572E
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