Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics-Reference-Cited by-同舟云学术

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Published:2011-03 Issue:1 Volume:318 Page:385-388
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mercier Frédéric,Nishizawa Shin-ichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. F.A. Halden, Growth of silicon carbide crystals from solution in molten metal alloys, in: Proceedings of the Conference on Silicon Carbide, Boston, 1960, pp. 115–123.

2. On the transport kinetics of silicon carbide in the silicon–scandium–carbon system;Yakimova;J. Cryst. Growth,1981

3. Dissolution and growth of silicon carbide crystals in melt-solutions;Ivantsov;Mater. Sci. Forum,1998

4. Top-seeded solution growth of bulk SiC: search for fast growth regimes;Epelbaum;Mater. Sci. Forum,2000

5. Liquid-phase epitaxy on 6H–SiC Acheson seed crystals in closed vessel;Khan;J. Cryst. Growth,2000

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