Design and characterization of type-II superlattice-based InAs/AlSb/GaSb detector structure-Reference-Cited by-同舟云学术

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Design and characterization of type-II superlattice-based InAs/AlSb/GaSb detector structure

Published:2024-05 Issue: Volume:633 Page:127674
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kızılkaya Kürşat,Kemal Öztürk Mustafa,Hoştut Mustafa,Ergün Yüksel,Özçelik Süleyman^ORCID

Publisher

Elsevier BV

Reference24 articles.

1. Proposal for strained type II superlattice infrared detectors;Smith;J. Appl. Phys.,1987

2. InAs/GaSb type-II superlattice infrared detectors: future prospect;Rogalski;Appl. Phys. Rev.,2017

3. InAs/GaSb infrared photovoltaic detector at 77 K;Yang;Electron. Lett.,1994

4. Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices;Haugan;J. Appl. Phys.,2008

5. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors;Alshahrani;Adv. Photon. Res.,2022

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