Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference24 articles.
1. Material considerations for third generation infrared photon detectors
2. Influence of IR sensor technology on the military and civil defense
3. Higher-operating-temperature high-performance infrared focal plane arrays
4. Type-II superlattice photodetectors for MWIR to VLWIR focal plane arrays
5. Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
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3. Comparison and analysis of Al0.7InAsSb avalanche photodiodes with different background doping polarities;Applied Physics Letters;2021-07-19
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5. Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure;Infrared Technology and Applications XLVI;2020-04-23
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