Author:
Ivanov Sergey V.,Jmerik Valentin N.,Shubina Tatiana V.,Listoshin Svyatoslav B.,Mizerov Andrey M.,Sitnikova Alla A.,Kim Min-Ho,Koike Masayoshi,Kim Bum-Joon,Kop’ev Pyotr S.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well
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3. Incorporation of indium during molecular beam epitaxy of InGaN
4. Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
5. Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
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