Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire-Reference-Cited by-同舟云学术

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Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire

Published:2007-01 Issue: Volume:298 Page:695-698
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Sung-Nam,Paek H.S.,Ryu H.Y.,Son J.K.,Sakong T.,Jang T.,Choi K.K.,Sung Y.J.,Kim Y.H.,Kim H.K.,Chae S.H.,Ha K.H.,Chae J.H.,Kim K.S.,Kwak J.S.,Nam O.H.,Park Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Growth pressure dependence of residual strain and threading dislocations in the GaN layer

2. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers

3. Growth of crack-free AlGaN film on high-temperature thin AlN interlayer

4. Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN∕GaN Waveguide;AIP Conference Proceedings;2010

2. Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence;Chinese Physics Letters;2008-12

3. High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers;Applied Physics Letters;2008-09

4. Properties of Selective-Area-Growth GaN Grown on Various Buffered Si(111) Substrates by HVPE;Journal of the Korean Physical Society;2007-12-31

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