Modeling analysis of the MOCVD growth of ZnO film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Modelling of transport phenomena in a low-pressure CVD reactor
2. The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations
3. Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors
4. Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors
5. A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process
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