The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Substrates for gallium nitride epitaxy
2. Preparation and properties of free-standing HVPE grown GaN substrates
3. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off
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1. Optimizing HVPE flow field to achieve GaN crystal uniform growth;Journal of Crystal Growth;2023-07
2. Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3;Japanese Journal of Applied Physics;2023-02-01
3. A pre-reaction suppressing strategy for α-Ga2O3 halide vapor pressure epitaxy using asymmetric precursor gas flow;CrystEngComm;2022
4. High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM;Applied Physics Express;2020-07-16
5. GaN-based LEDs using Homo-Epitaxial technology and the Progress and Challenges of HVPE method;IOP Conference Series: Materials Science and Engineering;2020-02-10
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