High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/aba321/pdf
Reference32 articles.
1. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
2. 2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit
3. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
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2. Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy;IEEE Transactions on Electron Devices;2024-05
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