Surface step morphologies of GaN films grown on vicinal sapphire (0001) substrates by rf-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Magnetically enhanced etching of sub‐0.5 μm polysilicon gates
2. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
3. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
4. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
5. Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy
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