DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor
2. Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
3. High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors
4. 179 W recessed-gate AlGaN∕GaN heterojunction FET with field-modulating plate
5. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements;Semiconductor Science and Technology;2012-08-01
2. Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements;physica status solidi (c);2012-01-26
3. Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate;Vacuum;2012-01
4. Highly selective zero-bias plasma etching of GaN over AlGaN;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
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