Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides
2. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
3. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
4. Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
5. Substrates for gallium nitride epitaxy
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1. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy;Scientific Reports;2016-05-17
2. Epitaxial growth of non-polar m-plane AlN film on bare and ZnO buffered m-sapphire;Journal of Crystal Growth;2014-04
3. High-Quality Al-Rich AlGaN Alloys;Springer Series in Materials Science;2011-11-24
4. Surface striation, anisotropic in-plane strain, and degree of polarization in nonpolarm-plane GaN grown on SiC;Journal of Physics D: Applied Physics;2011-08-31
5. Structural and Optical Properties of Nonpolar AlN(11\bar20) Films Grown on ZnO(11\bar20) Substrates with a Room-Temperature GaN Buffer Layer;Japanese Journal of Applied Physics;2010-06-07
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