Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy-Reference-Cited by-同舟云学术

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Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy

Published:2007-04 Issue: Volume:301-302 Page:225-229
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chavanapranee Tosaporn,Horikoshi Yoshiji

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's

2. Molecular-beam epitaxial growth of heavily acceptor doped GaAs layers for GaAlAs/GaAs heterojunction bipolar transistors

3. Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability

4. Photoreflectance of AlxGa1−xAs and AlxGa1−xAs/GaAs interfaces and high‐electron‐mobility transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-type doping of GaAs nanowires;Applied Physics Letters;2008-04-21

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