Molecular-beam epitaxial growth of heavily acceptor doped GaAs layers for GaAlAs/GaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Molecular-beam epitaxial growth of heavily acceptor doped GaAs layers for GaAlAs/GaAs heterojunction bipolar transistors

Published:1992-03 Issue:2 Volume:10 Page:856
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hoke W. E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy;Journal of Crystal Growth;2007-04

2. Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy;Journal of Crystal Growth;2003-05

3. Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy;Journal of Crystal Growth;2002-08

4. Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide;Journal of Applied Physics;1998-10-15

5. GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10[sup 20] cm[sup −3] grown by solid-source molecular beam epitaxy using CBr[sub 4];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

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