Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's-Reference-Cited by-同舟云学术

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Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's

Published:1990-10-20 Issue:Part 1, No. 10 Volume:29 Page:1900-1907
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saito Koki,Konagai Makoto,Takahashi Kiyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy;Journal of Crystal Growth;2007-04

2. GaInP/AlGaAs/GaInP double heterojunction bipolar transistors with zero conduction band spike at the collector;IEEE Transactions on Electron Devices;1998

3. Concentration dependent electron distributions in heavily Si-doped GaAs;Solid State Communications;1996-08

4. In-situ optical measurement of adsorption of Langmuir-Blodgett films deposited on optical fibers;Thin Solid Films;1996-02

5. In–situ Optical Monitoring of Langmuir-Blodgett Films Deposited on Optical Fibers;Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals;1995-10

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