Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Special issue on ‘Nanoelectronics and Nanoscale Processing’;Nötzel;Proc. IEEE,2003
2. Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template
3. Direct imaging of self-organized anisotropic strain engineering for improved one-dimensional ordering of (In,Ga)As quantum dot arrays
4. Self-organized lattice of ordered quantum dot molecules
5. Ordered quantum dot molecules and single quantum dots formed by self-organized anisotropic strain engineering
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy;Journal of Crystal Growth;2009-03
2. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (311)B substrates;Materials Science in Semiconductor Processing;2009-02
3. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates;Journal of Applied Physics;2007-11
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