Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Self-organized anisotropic strain engineering: a new concept for quantum dot ordering
2. Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substrates
3. Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy
4. Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces
5. Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
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1. Ordering, positioning and uniformity of quantum dot arrays;Nano Today;2012-04
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