Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates-Reference-Cited by-同舟云学术

Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

Published:2007-11 Issue:9 Volume:102 Page:094301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Selçuk E.,Hamhuis G. J.,Nötzel R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2801364

Reference12 articles.

1. R. Nötzel, T. Mano, Q. Gong, and J. H. Wolter, in Nanoelectronics and Nanoscale Processing, special issue of Proc. IEEEIEEPAD0018-9219 91, 1898 (2003), and references therein.

2. Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces

3. Controlled ordering and positioning of InAs self-assembled quantum dots

4. Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (001) GaAs substrates

5. Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

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1. Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (100) and (311)B substrates by self-organized anisotropic strain engineering;Journal of Crystal Growth;2010-07

2. Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control;IEEE Photonics Journal;2010-02

3. Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control;2009 IEEE LEOS Annual Meeting Conference Proceedings;2009-10

4. Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates;Applied Physics Letters;2009-06-29

5. Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B;physica status solidi (c);2009-06