Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Substrates for gallium nitride epitaxy
2. A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
3. Growth of GaN by ECR-assisted MBE
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy
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