Growth of dilute GaSbN layers by liquid-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Bowing parameter of the band-gap energy of GaNxAs1−x
2. MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001)
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. GaAsSbN: a new low-bandgap material for GaAs substrates
5. InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
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1. Influence of Sb Related Impurity States on the Band Structure of Dilute GaN1−xSbx Alloy;Journal of Electronic Materials;2020-11-24
2. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020
3. First principles study of the structural, electronic and optical properties of epitaxial GaSb1−x−yNyBix, lattice matched to GaSb;Materials Research Express;2018-09-05
4. The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb1−x−y N y Bi x /GaSb: a theoretical approach;Journal of Materials Science;2017-01-20
5. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017
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