Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth-Reference-Cited by-同舟云学术

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Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth

Published:2007-01 Issue: Volume:298 Page:272-275
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Detchprohm T.,Xia Y.,Xi Y.,Zhu M.,Zhao W.,Li Y.,Schubert E.F.,Liu L.,Tsvetkov D.,Hanser D.,Wetzel C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

4. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

5. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

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