InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Infrared semiconductor lasers for sensing and diagnostics
2. 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
3. DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
4. Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
5. InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm
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2. Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy;Applied Surface Science;2023-11
3. Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices;Solids;2023-10-01
4. Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms;Crystals;2023-09-11
5. Liquid phase epitaxy growth and photoluminescence of InAs1−x−ySbxPy epilayer;Materials Research Express;2019-05-31
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