DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb-Reference-Cited by-同舟云学术

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DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb

Published:1980-10 Issue:10 Volume:19 Page:L641-L644
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Naoki,Horikoshi Yoshiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/19/i=10/a=L641/pdf

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calculation of tunable type-II band alignments in InAsxSbyP1−x−y/InAs heterojunctions;Japanese Journal of Applied Physics;2015-11-27

2. Raman scattering in InAsxSbyP1−x−yalloys grown by gas source MBE;Journal of Physics D: Applied Physics;2011-02-10

3. Photoluminescence of InAs0.04P0.67Sb0.29;Journal of Applied Physics;2008-07-15

4. Sources of spontaneous emission based on indium arsenide;Semiconductors;2008-06

5. InAsPSb quaternary alloy grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2007-04

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