Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials-Reference-Cited by-同舟云学术

Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

Published:2007-05 Issue:2 Volume:303 Page:449-455
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jallipalli A.,Balakrishnan G.,Huang S.H.,Khoshakhlagh A.,Dawson L.R.,Huffaker D.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)

2. GaInNAs(Sb) long wavelength communications lasers

3. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

4. Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

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