TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.2 [micro sign]m range GaInAs SQW lasers using Sb as surfactant
3. Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?
4. Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy
5. TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy
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1. Novel BTlGaN semiconducting materials for infrared opto-electronic devices;Infrared Physics & Technology;2017-03
2. BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS;Modern Physics Letters B;2012-09-11
3. X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing-induced structural changes;Journal of Applied Physics;2010-12-15
4. Improvement in luminescence properties of TlInGaAsN/TlInP multi-layers grown by gas source molecular beam epitaxy;2009 IEEE International Conference on Indium Phosphide & Related Materials;2009-05
5. MBE growth and characterization of TlInGaAsN double quantum well structures;Journal of Crystal Growth;2009-03
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