Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD-Reference-Cited by-同舟云学术

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Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

Published:2004-02 Issue:1-4 Volume:262 Page:456-460
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang Yuantao,Du Guotong,Liu Boyang,Zhu HuiChao,Yang Tianpeng,Li Wancheng,Liu Dali,Yang Shuren

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Electronic properties of ZnO/CdS/Cu(In,Ga)Se2 solar cells — aspects of heterojunction formation

2. ZnO diode fabricated by excimer-laser doping

3. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

4. Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

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4. ZnO and Related Materials;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

5. Chemical reaction mechanism of ZnO grown using DEZn and N2O in MOCVD;CrystEngComm;2018

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