Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate-Reference-Cited by-同舟云学术

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Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Published:2004-03 Issue:1-4 Volume:263 Page:4-11
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lu Yuan,Liu Xianglin,Wang Xiaohui,Lu Da-Cheng,Li Dabing,Han Xiuxun,Cong Guangwei,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

2. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

3. Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

4. High quality GaN–InGaN heterostructures grown on (111) silicon substrates

5. Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer

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1. High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression;Results in Physics;2023-04

2. Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*;Chinese Physics B;2021-12-01

3. Irradiation with phosphorus ions modifies the structure and tunable band-gap of a hexagonal AlN thin film;Applied Physics A;2021-08-28

4. Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method;Journal of the Korean Physical Society;2020-08

5. The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate;Semiconductor Science and Technology;2020-02-25

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