The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab7149/pdf
Reference35 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
3. Attenuation mechanisms of aluminum millimeter-wave coplanar waveguides on silicon
4. Coplanar waveguides and microwave inductors on silicon substrates
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2. More than 60% RF loss reduction and improved crystal quality of GaN-on-Si achieved by in-situ doping tert-butylphosphorus;Journal of Crystal Growth;2024-01
3. Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance;ECS Journal of Solid State Science and Technology;2023-09-01
4. RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks;Applied Physics Letters;2023-07-24
5. Suppression of p-type parasitic channel formation at the interface between the aluminum nitride nucleation layer and the high-resistivity silicon substrate;Surfaces and Interfaces;2023-02
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