The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab7149/pdf
Reference35 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
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2. Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors;Materials Science in Semiconductor Processing;2024-03
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4. Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance;ECS Journal of Solid State Science and Technology;2023-09-01
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