Growth of good quality InGaN multiple quantum wells by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
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1. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids;Science China Technological Sciences;2021-06-15
2. Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns;Superlattices and Microstructures;2015-07
3. Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy;Applied Surface Science;2015-03
4. From Clusters to Semiconductor Nanostructures;Journal of Nanoscience and Nanotechnology;2014-02-01
5. Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets;Physica E: Low-dimensional Systems and Nanostructures;2012-08
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