1. Hasse, M.A., Qiu, J., Depuydt, J.M. and Cheng, H., Appl. Phys. Lett., 59, 1991, 1972; Park, R.M., Troffer, M.B., Rouleau, C.M., Depuydt, J.M. and Hasse, M.A., Appl. Phys. Lett., 57, 1990, 2127; Shazad, K., Petruzello, J., Olego, D.J., Cammack, D.A. and Gaines, J.M., Appl. Phys. Lett., 57, 1990, 2452; Hua, G.C., Otsuka, N., Grillo, D.C., Fan, Y., Han, J., Ringle, M.D., Gunshor, R.L., Hovinen, M. and Nurmikko, A.V., Appl. Phys. Lett., 65, 1995, 1331
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
3. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
4. Fundamental energy gap of GaN from photoluminescence excitation spectra
5. Luminescent properties of GaN