Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy-Reference-Cited by-同舟云学术

Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

Published:2015-03 Issue: Volume:331 Page:444-448
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wu Zhenlong,Chen Peng,Yang Guofeng,Xu Zhou,Xu Feng,Jiang Fulong,Zhang Rong,Zheng Youdou

Funder

Nature Science Foundation of Jiangsu Province

China Postdoctoral Science Foundation

Jiangsu Planned Projects for Postdoctoral Research Funds

Fundamental Research Funds for Central Universities

NJU-Yangzhou Institute of Optoelectronics

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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