High nitrogen content InGaAsN/GaAs single quantum well for 1.55μm applications grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
3. 1.3-μm GaInNAs-AlGaAs distributed feedback lasers
4. OC-48 capable InGaAsN vertical cavity lasers
5. Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs
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1. Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition;Journal of Alloys and Compounds;2018-08
2. Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy;Journal of Crystal Growth;2015-05
3. Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire;physica status solidi (a);2014-05-12
4. Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures;Journal of The Electrochemical Society;2011
5. Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor;Semiconductor Science and Technology;2008-03-12
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