Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire-Reference-Cited by-同舟云学术

Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire

Published:2014-05-12 Issue:8 Volume:211 Page:1740-1744
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Klangtakai Pawinee¹²³,Sanorpim Sakuntam⁴,Karlsson Fredrik⁵,Holtz Per Olof⁵,Pimanpang Samuk¹²³,Onabe Kentaro⁶

Affiliation:

1. Faculty of Science; Department of Physics; Khon Kaen University; 123 Mittraphap Rd. Muang Khon Kaen 40002 Thailand

2. Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage; Khon Kaen 40002 Thailand

3. Integrated Nanotechnology Research Center; Khon Kaen University; Khon Kaen 40002 Thailand

4. Faculty of Science; Department of Physics; Chulalongkorn University; Phayathai Rd. Patumwan Bangkok 10330 Thailand

5. Department of Physics, Chemistry, and Biology (IFM); Linköping University; 58183 Linköping Sweden

6. Department of Advanced Materials Science; The University of Tokyo; 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. 1-eV solar cells with GaInNAs active layer

2. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

3. Novel materials for high-efficiency III–V multi-junction solar cells

4. 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

5. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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