Fabrication of self-organized GaInNAs quantum dots by atomic H-assisted RF-molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Single-electron phenomena in semiconductors
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1. Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers;Physica E: Low-dimensional Systems and Nanostructures;2006-05
2. Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE;Journal of Crystal Growth;2006-04
3. Recent Progress in Dilute Nitride Quantum Dots;Dilute Nitride Semiconductors;2005
4. Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy;Thin Solid Films;2004-10
5. Morphology and optical properties of InAs(N) quantum dots;Journal of Applied Physics;2004-09
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