Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
2. 1.5 [micro sign]m laser on GaAs with GaInNAsSb quinary quantum well
3. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
4. Studies on single- and multi-layer InAsN quantum dots grown by solid source molecular beam epitaxy
5. Fabrication of self-organized GaInNAs quantum dots by atomic H-assisted RF-molecular beam epitaxy
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1. On the prospect of identifying visible emissions from optical measurements of self-assembled QDs;Results in Materials;2023-09
2. The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE;Vacuum;2020-02
3. Ultrathin GaAsN matrix-induced reduced full width at half maximum of GaAsN/InAs/GaAsN dot-in-a-well heterostructures with extended emission wavelength;Journal of Luminescence;2018-02
4. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016
5. Molecular Beam Epitaxy: An Overview;Comprehensive Semiconductor Science and Technology;2011
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