Author:
Shiga Keiji,Takahashi Atsuko,Chuang Lu-Chung,Maeda Kensaku,Morito Haruhiko,Fujiwara Kozo
Funder
Japan Society for the Promotion of Science
SEI Group CSR Foundation
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Indium antimonide-A review of its preparation, properties and device applications;Hulme;Solid State Electron.,1962
2. The physics and technology of gallium antimonide: An emerging optoelectronic material;Dutta;J. Appl. Phys.,1997
3. A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors;Hurle;J. Cryst. Growth.,1995
4. A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors, in;Hurle;J. Cryst. Growth, North-Holland,2004
5. Polarity effects in III–V semiconducting compounds;Barber;J. Phys. Chem. Solids.,1965
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献