Indium antimonide—A review of its preparation, properties and device applications-Reference-Cited by-同舟云学术

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Indium antimonide—A review of its preparation, properties and device applications

Published:1962-07 Issue:4 Volume:5 Page:211-IN10
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hulme K.F.,Mullin J.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference218 articles.

1. Über neue halbleitende Verbindungen

2. Advances in physics;Pincherle;Phil. Mag.,1956

3. Semiconductors;Smith,1959

Cited by 149 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An ultrasensitive refractive index based THz optical biosensor based on plasmon induced transparency (PIT);Physica Scripta;2024-09-04

2. Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes;Journal of Solid State Electrochemistry;2024-06-18

3. Optical properties of InSb derived from reflection electron energy loss spectroscopy spectrum;Vacuum;2024-05

4. Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals;CrystEngComm;2024

5. InSb: A Stable Cycling Anode Material Enables Fast Charging of Li-Ion Batteries at Sub-zero Temperatures;ACS Energy Letters;2023-05-03

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