Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples-Reference-Cited by-同舟云学术

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Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Published:2022-02 Issue: Volume:579 Page:126459
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Peng Hongyu,Liu Yafei,Chen Zeyu,Cheng Qianyu,Hu Shanshan,Raghothamachar Balaji,Dudley Michael,Sampayan Kristin,Sampayan Stephen

Funder

Advanced Research Projects Agency - Energy

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. 80‐MW photoconductor power switch

2. High Voltage Wide Bandgap Photoconductive Switching

3. Photoconductive and photovoltaic response of high‐dark‐resistivity 6H‐SiC devices

4. 4H–SiC photoconductive switching devices for use in high-power applications

5. Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations;Materials Science in Semiconductor Processing;2024-05

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