Author:
Ishiji K.,Fujii T.,Araki T.,Fukuda T.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Growth defects in GaN films on 6H–SiC substrates;Chien;Appl. Phys. Lett.,1996
2. X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC;Kirste;Appl. Surf. Sci.,2006
3. Structural classification of RAO3(MO)n compounds (R = Sc, In, Y, or Lanthanides; A = Fe(III), Ga, Cr, or Al; M = divalent cation; n = 1–11);Kimizuka;J. Solid State Chem.,1989
4. Study on growth and characterization of ScAlMgO4 substrate crystal;Tang;J. Alloys Compd.,2009
5. Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN;Ohnishi;Jpn. J. Appl. Phys.,2019
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献