Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates-Reference-Cited by-同舟云学术

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Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates

Published:2019-04 Issue: Volume:512 Page:6-10
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Desplanque L.,Bucamp A.,Troadec D.,Patriarche G.,Wallart X.

Funder

TOPONANO

French Technological Network Renatech

Région Hauts de France

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

2. High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

3. Temperature dependent properties of InSb and InAs nanowire field-effect transistors

4. Epitaxy of advanced nanowire quantum devices

5. Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

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1. Electronic Transport and Quantum Phenomena in Nanowires;Chemical Reviews;2024-02-23

2. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy;Nanotechnology;2023-11-24

3. Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration;Materials;2022-03-30

4. Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide;ACS Applied Energy Materials;2021-10-04

5. Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands;Crystal Growth & Design;2021-07-15

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