Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands-Reference-Cited by-同舟云学术

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Published:2021-07-15 Issue:8 Volume:21 Page:4732-4737
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Dubrovskii Vladimir G.¹^ORCID,Steinvall Simon Escobar²,de Mestral Virginie²,Paul Rajrupa²^ORCID,Leran Jean-Baptiste²,Zamani Mahdi²,Stutz Elias Z.²,Fontcuberta i Morral Anna²³^ORCID

Affiliation:

1. Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, St. Petersburg 199034, Russia

2. Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015, Switzerland

3. Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015, Switzerland

Funder

the Russian Science Foundation

SNSF Consolidator grant

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00569

Reference30 articles.

1. Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures

2. Template-Assisted Scalable Nanowire Networks

3. Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks

4. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

5. Exploring the Size Limitations of Wurtzite III–V Film Growth

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide;ACS Applied Energy Materials;2021-10-04