Optimization of total resolved shear stress in AlN single crystals homoepitaxially grown by physical vapor transport method
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Growth and applications of Group III-nitrides
2. Growth of high purity AlN crystals
3. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules
4. Similarities and differences in sublimation growth of SiC and AlN
5. Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals;CrystEngComm;2024
2. Analysis of residual thermal stress for AlN crystal growth by PVT;Vacuum;2023-08
3. Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process;Frontiers in Materials;2023-01-10
4. Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method;Crystal Growth & Design;2022-04-11
5. The Effect of the Crucible on the Temperature Distribution for the Growth of a Large Size AlN Single Crystal;Materials;2021-12-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3