Reduced radial resistivity variation of FZ Si wafers with Advanced NTD

Author:

Lei AndersORCID,Græsvænge Martin,Hindrichsen Christian

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Neutron Transmutation Doping of Silicon at Research Reactors;International Atomic Energy Agency,2012

2. L. Altmannshofer, Method and device for the production of a single crystal, Mar. 2006. https://patents.google.com/patent/US7011704B2/en?oq=us7011704b2.

3. Float-Zone silicon crystal growth at reduced RF frequencies;Rost;J. Cryst. Growth,2012

4. Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth;Ratnieks;J. Cryst. Growth,2000

5. Study on the radial resistivity variation of the gas doped floating-zone single-crystal silicon;Zhang;Adv. Mater. Res.,2011

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