The Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200mm Floating Zone Silicon Single Crystal Growth
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Publisher
Elsevier BV
Reference14 articles.
1. Reduced radial resistivity variation of FZ Si wafers with Advanced NTD;Anders Lei;Journal of Crystal Growth,2019
2. Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon;Xue-Feng Han;Journal of Crystal Growth,2020
3. Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth;Ratnieks;Journal of Crystal Growth,2000
4. Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals;G Raming;Journal of Crystal Growth,2001
5. Float-Zone silicon crystal growth at reduced RF frequencies;H.-J Rost;Journal of Crystal Growth,2012
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