VGF growth of high quality InAs single crystals with low dislocation density-Reference-Cited by-同舟云学术

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VGF growth of high quality InAs single crystals with low dislocation density

Published:2020-02 Issue: Volume:531 Page:125350
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Jun,Lu Wei,Duan Manlong,Xie Hui,Shen Guiying,Liu Jingmin,Dong Zhiyuan,Zhao Youwen

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Indium arsenide: a semiconductor for high speed and electro-optical devices

2. High quality InAs grown by liquid phase epitaxy using gadolinium gettering

3. Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96Layers with Cutoff Wavelength of 12 µm

4. Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08Heterostructures

5. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition

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1. Determination of the criterion for the morphological classification of etching pits formed in InSb single crystals grown by the Czochralski method in the crystallographic direction [111] and doped with tellurium;Industrial laboratory. Diagnostics of materials;2024-07-27

2. Epitaxial hillocks defects caused by subsurface damage from InAs substrate;Microelectronics Reliability;2024-05

3. Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method;Materials Science in Semiconductor Processing;2023-11

4. Melt-conditioned vertical gradient freeze (MCVGF) to increase growth speed and process efficiency: a modelling approach;The International Journal of Advanced Manufacturing Technology;2023-09-11

5. Regulation of the Temperature Field and Evolution of the Melt Convection Field During InP Crystal Growth with the Vertical Gradient Freeze Method;Journal of Electronic Materials;2023-08-24

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