Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN-Reference-Cited by-同舟云学术

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Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN

Published:2019-07 Issue: Volume:518 Page:51-58
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Knetzger Michael,Meissner Elke,Schröter Christopher,Friedrich Jochen^ORCID

Funder

German BMWi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Gallium Nitride Enabled High Frequency and High Efficiency Power Conversion,2018

2. The 2018 GaN power electronic roadmap;Amano;J. Phys. D: Appl. Phys,2018

3. Technology of GaN Crystal GrowthTechnology of GaN Crystal Growth,2010

4. On the origin of threading dislocations in GaN films;Morama;J. Appl. Phys.,2009

5. Atomic and electronic structure of mixed and partial dislocations in GaN;Arslan;Phys Rev. Lett.,2005

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1. Influence of 700 keV O ³⁺ ion implantation on current transport properties of Cr/p-GaN SBD’s;Radiation Effects and Defects in Solids;2024-07-16

2. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03

3. Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry;Materials;2021-11-30

4. Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes;Materials;2020-03-13

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