Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Bulk and epitaxial growth of silicon carbide
3. Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes
4. Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
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