Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
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4. Electrical characterization of 4H-SiC avalanche photodiodes containing threading edge and screw dislocations;Berechman;J. Appl. Phys.,2010
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1. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03
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